paper

NMR lineshape of Si in single-crystal silicon

arXiv:1610.03511 · doi:10.1103/PhysRevB.95.134417

Abstract

We report measurements of the NMR lineshape of 4.685\% abundant Si in single-crystal silicon for four different crystallographic orientations relative to the applied magnetic field. To avoid significant inhomogeneous broadening, the sample crystals are immersed in a susceptibility matched liquid and the proton NMR lineshape in the liquid is used to measure the residual susceptibility mismatch and to shim the applied field. The observed lineshapes are in good agreement with disorder-averaged spin dynamics simulations performed on a unit cell lattice with periodic boundary conditions. The splitting of resolved doublet features is used to measure the asymmetry of the nearest-neighbor indirect dipole or J-coupling tensor, with the result Hz. All resolved doublets can be identified with specific nearest and next-nearest neighbor isolated spin pairs that occur in the disorder ensemble.

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