Phonon assisted resonant tunnelling and its phonons control

Abstract

We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling the current-voltage characteristics of tunnel contact created between atomic force microscope tip and a surface of InAs/GaAs quantum dots display many interesting peaks. We found that the number, position, and heights of these peaks are associated with the phonon modes involved. To describe the found effect we use a quasi-classical approximation. There the tunnelling current is related to a creation of a dilute instanton-anti-instanton gas. Our experimental data are well described with exactly solvable model where one charged particle is weakly interacting with two promoting phonon modes associated with external medium. We conclude that the characteristics of the tunnel nanoelectronic devices can thus be controlled by a proper choice of phonons existing in materials, which are involved.

arXiv comment6 pages, 4 figures, JETP Lett. (2016)

References in corpus (5)

• Dissipation due to tunneling two-level systems in gold nanomechanical resonators
• Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules
• Phonon-assisted tunneling and two-channel Kondo physics in molecular junctions
• Resonant Tunneling in a Dissipative Environment
• Two-dimensional tunnel correlations with dissipation