Origin of Stationary Domain Wall Enhanced Ferroelectric Susceptibility

Abstract

Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric materials. The enhancement of low-field susceptibility/permittivity under subswitching conditions is usually attributed to the reversible domain wall vibration. Recent experiments highlight the stationary domain wall contribution to the dielectric susceptibility irrespective of any lateral displacements or deformations of the wall. We study the effects of domain walls on low-field permittivity of PbTiO${}_3$ with density functional theory and molecular dynamics simulations. The static dielectric constant is calculated as a function of increasing domain wall density and temperature. We find an increase of dielectric permittivity with increasing domain wall density, which is expected to occur at low driving field where the lateral motion of domain walls is forbidden. Real-space decomposition of dielectric response reveals that frustrated dipoles within the finite width of the domain walls are responsible for the enhanced low-field permittivity.

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• Thermal stability of nano-scale ferroelectric domains by molecular dynamics modeling
• Dynamics of Conducting Ferroelectric Domain Walls