Transport in a two-dimensional disordered electron liquid with isospin degrees of freedom
arXiv:1609.07874
Abstract
Recent theoretical results on transport in a two-dimensional disordered electron liquid with spin and isospin degrees of freedom are reviewed. A number of experimental features in temperature dependence of resistivity at low temperatures in Si-MOSFET, n-AlAs quantum well and double quantum well heterostructures is explained. Novel behavior of low-temperature resistivity at low temperature in electron systems with isospin degrees of freedom are predicted.
Contribution to: "Strong Correlation Phenomena around 2D Conductor-Insulator Transitions", edited by S. V. Kravchenko, Pan Stanford Publishing, 2016