Universality and critical behavior of the dynamical Mott transition in a system with long-range interactions

Abstract

We study numerically the voltage-induced breakdown of a Mott insulating phase in a system of charged classical particles with long-range interactions. At half-filling on a square lattice this system exhibits Mott localization in the form of a checkerboard pattern. We find universal scaling behavior of the current at the dynamic Mott insulator-metal transition and calculate scaling exponents corresponding to the transition. Our results are in agreement, up to a difference in universality class, with recent experimental evidence of dynamic Mott transition in a system of interacting superconducting vortices.

6 pages, 5 figures

References in corpus (6)

• Universal electric-field-driven resistive transition in narrow-gap Mott insulators
• Resistive switching induced by electronic avalanche breakdown in GaTa${}_4$Se${}_{8-x}$Te${}_x$ narrow gap Mott Insulators
• Jumps in current-voltage characteristics in disordered films
• Electric-field-driven resistive switching in dissipative Hubbard model
• Influence of long-range interactions on charge ordering phenomena on a square lattice
• Parity-time symmetry-breaking mechanism of dynamic Mott transitions in dissipative systems

Cited by in corpus (3)

• Scaling Universality at the Dynamic Vortex Mott Transition
• Critical behavior of dynamic vortex Mott transition in superconducting arrays at fractional vortex densities
• Critical exponents and fine-grid vortex model of the dynamic vortex Mott transition in superconducting arrays