Intrinsic large gap quantum anomalous Hall insulators in La (=Br, Cl, I)
arXiv:1608.06056 · doi:10.1103/PhysRevB.92.205133
Abstract
We report a theoretical prediction of a new class of bulk and intrinsic quantum Anomalous Hall (QAH) insulators La (=Br, Cl, and I) via relativistic first-principle calculations. We find that these systems are innate long-ranged ferromagnets which, with the help of intrinsic spin-orbit coupling, become QAH insulators. A low-energy multiband tight binding model is developed to understand the origin of the QAH effect. Finally integer Chern number is obtained via Berry phase computation for each two-dimensional plane. These materials have the added benefit of a sizable band gap of as large as 25 meV, with the flexibility of enhancing it to above 75 meV via strain engineering. The synthesis of La materials will provide the impurity-free single crystals and thin-film QAH insulators for versatile experiments and functionalities.
16 pages (including appendix and supp. mat)
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