Electronic properties of 8-Pmmn borophene

Abstract

First-principles calculations on monolayer 8-{\it Pmmn} borophene are reported to reveal unprecedented electronic properties in a two-dimensional material. Based on a Born effective charge analysis, 8-{\it Pmmn} borophene is the first single-element based monolayered material exhibiting two sublattices with substantial ionic features. The observed Dirac cones are actually formed by the p${}_z$ orbitals of one of the inequivalent sublattices composed of uniquely four atoms, yielding an underlying hexagonal network topologically equivalent to distorted graphene. A significant physical outcome of this effect includes the possibility of converting metallic 8-{\it Pmmn} borophene into an indirect band gap semiconductor by means of external shear stress. The stability of the strained structures are supported by a phonon frequency analysis. The Dirac cones are sensitive to the formation of vacancies only in the inequivalent sublattice electronically active at the Fermi level.

5 pages, 5 figures

References in corpus (1)

• Novel Precursors for Boron Nanotubes: The Competition of Two-Center and Three-Center Bonding in Boron Sheets

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