Tunneling transport of mono- and few-layers magnetic van der Waals MnPS${}_3$

Abstract

We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm.

APL Mater. (in press)

References in corpus (3)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Stability of exfoliated Bi${}_2$Sr${}_2$Dy${}_x$Ca${}_{1-x}$Cu${}_2$O${}_{8+\delta }$ studied by Raman microscopy

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• Ultrafast laser-driven topological spin textures on a 2D magnet
• Complete mapping of magnetic anisotropy for prototype Ising van der Waals FePS${}_3$
• Local nuclear and magnetic order in the two-dimensional spin glass, Mn${}_{0.5}$Fe${}_{0.5}$PS${}_3$