Probing 5f-state configurations in URu2Si2 with U L3-edge resonant x-ray emission spectroscopy

Abstract

Resonant x-ray emission spectroscopy (RXES) was employed at the U L3 absorption edge and the La1 emission line to explore the 5f occupancy, nf, and the degree of 5f orbital delocalization in the hidden order compound URu2Si2. By comparing to suitable reference materials such as UF4, UCd11, and alpha-U, we conclude that the 5f orbital in URu2Si2 is at least partially delocalized with nf = 2.87 +/- 0.08, and does not change with temperature down to 10 K within the estimated error. These results place further constraints on theoretical explanations of the hidden order, especially those requiring a localized f2 ground state.

arXiv comment11 pages,7 figures

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• Slave Boson Theory of Orbital Differentiation with Crystal Field Effects: Application to UO${}_2$
• Resonant x-ray spectroscopy of uranium intermetallics at the U $M_{4,5}$ edges
• Direct bulk sensitive probe of 5f symmetry in URu2Si2
• Synchrotron Radiation Techniques and their Application to Actinide Materials
• Distinct magnetic spectra in the hidden order and antiferromagnetic phases in URu2-xFexSi2
• Theory of resonant x-ray emission spectra in compounds with localized f electrons
• Thermodynamic Measurement of Angular Anisotropy at the Hidden Order Transition of URu${}_2$Si${}_2$
• Quantifying the U $5f$ covalence and degree of localization in U intermetallics
• Origin of gap-like behaviors in URu${}_2$Si${}_2$: Combined study via quasiparticle scattering spectroscopy and resistivity measurements
• Raman Active High Energy Excitations in URu${}_2$Si${}_2$
• Valence instability across magnetostructural transition in USb${}_2$
• UCd${}_{11}$: A strongly localized 5$f^3$ material
• f-electron charge densities probed using core level non-resonant inelastic x-ray scattering
• Unified Theory of Hastatic order and Antiferromagnetism in URu${}_2$Si${}_2$