Refractory period of an excitable semiconductor laser with optical injection

Abstract

Injection-locked semiconductor lasers can be brought to a neuron-like excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.

arXiv comment9 pages, 11 figures

References in corpus (2)

• Dynamical laser spike processing
• Topological solitons as addressable phase bits in a driven laser

Cited by in corpus (4)

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• Topological Localized states in the time delayed Adler model: Bifurcation analysis and interaction law
• Refractory times for excitable dual state quantum dot laser neurons
• Success rate analysis of the response of an excitable laser to periodic perturbations