Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering
arXiv:1606.05972 · doi:10.1016/j.mee.2016.10.015
Abstract
A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters.
11 pages, 7 figures, accepted for publication in Microelectronic Engineering edition on Materials for Advanced Metallization