Disentangling the surface and bulk electronic structures of LaOFeAs
arXiv:1606.01033 · doi:10.1103/PhysRevB.94.104517
Abstract
We performed a comprehensive angle-resolved photoemission spectroscopy study of the electronic band structure of LaOFeAs single crystals. We found that samples cleaved at low temperature show an unstable and highly complicated band structure, whereas samples cleaved at high temperature exhibit a stable and clearer electronic structure. Using \emph{in-situ} surface doping with K and supported by first-principles calculations, we identify both surface and bulk bands. Our assignments are confirmed by the difference in the temperature dependence of the bulk and surface states.
5 pages, 5 figures
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Cited by in corpus (5)
- Revealing the intrinsic superconducting gap anisotropy in surface-neutralized BaFe(AsP)
- Strong surface termination dependence of the electronic structure of polar superconductor LaFeAsO revealed by nano-ARPES
- Superconducting gap and pseudogap in the surface states of the iron-based superconductor PrFeAsO studied by angle-resolved photoemission spectroscopy
- Change of Fermi surface states related with two different -raising mechanisms in iron pnictide superconductor
- Observation of the bands with orbital character near the Fermi level in NdFeAsPOF using angle-resolved photoemission spectroscopy