Helium diffraction on SiC grown graphene, qualitative and quantitative description with the hard corrugated wall model

Abstract

The Moiré structure of epitaxial graphene mono layer grown on 6H-SiC(0001) has been investigated recently by grazing incidence fast atom diffraction, and the results were compared with the calculation of the structure \textit{ab initio} and exact diffraction codes. We review these results and present a complementary approach using the Hard Wall Model to extract information without any \textit{a priori}. Reversely, taking advantage of previous exact calculations we evaluate quantitatively the performance of this simplified approach by comparing predictions using the same potential energy surface.

arXiv comment8 pages, 12 figures

References in corpus (3)

• Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
• Electronic and Geometric Corrugation of Periodically Rippled, Self-nanostructured Graphene Epitaxially Grown on Ru(0001)
• Diffraction of fast atoms and molecules from surfaces

Cited by in corpus (8)

• Elastic and inelastic diffraction of fast atoms,\linebreak Debye-Waller factor and Mössbauer-Lamb-Dicke regime
• Refraction of fast Ne atoms in the attractive well of LiF(001) surface
• Phonon contribution in grazing-incidence fast atom diffraction from insulator surfaces
• A large area high resolution imaging detector for fast atom diffraction
• Energy loss and inelastic diffraction of fast atoms at grazing incidence
• Temperature dependence in fast-atom diffraction at surfaces
• A setup for grazing incidence fast atom diffraction
• Diffraction of fast heavy noble gas atoms, Ar, Kr and Xe on a LiF(001) surface Changing the tip of a 'perfect' AFM