Electrostatic control of quantum Hall ferromagnetic transition, a step toward reconfigurable network of helical channels
arXiv:1605.02023 · doi:10.1103/PhysRevB.94.075309
Abstract
Ferromagnetic transitions between quantum Hall states with different polarization at a fixed filling factor can be studied by varying the ratio of cyclotron and Zeeman energies in tilted magnetic field experiments. However, an ability to locally control such transitions at a fixed magnetic field would open a range of attractive applications, e.g. formation of a reconfigurable network of one-dimensional helical domain walls in a two-dimensional plane. Coupled to a superconductor, such domain walls can support non-Abelian excitation. In this article we report development of heterostructures where quantum Hall ferromagnetic (QHFm) transition can be controlled locally by electrostatic gating. A high mobility two-dimensional electron gas is formed in CdTe quantum wells with engineered placement of paramagnetic Mn impurities. Gate-induced electrostatic field shifts electron wavefunction in the growth direction and changes overlap between electrons in the quantum well and d-shell electrons on Mn, thus controlling the s-d exchange interaction and the field of the QHFm transition. The demonstrated shift of the QHFm transition at a filling factor is large enough to allow full control of spin polarization at a fixed magnetic field.
arXiv comment6 pages, 5 figures
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Cited by in corpus (8)
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- Momentum-resolved spin splitting in Mn-doped trivial CdTe and topological HgTe semiconductors
- Transport in helical Luttinger liquids in the fractional quantum Hall regime
- Mesoscopic transport in electrostatically-defined spin-full channels in quantum Hall ferromagnets
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