Topological surface states in dense solid hydrogen
arXiv:1604.08225 · doi:10.1103/PhysRevLett.117.206403
Abstract
It has recently been established that two-dimensional massless graphene-like systems and three-dimensional line-node topological semimetals comprise a special class of centrosymmetric materials where edge/surface states of topological nature inevitably appear in some k-regions. We show that the phases of solid hydrogen produced at megabar pressures can be line-node topological semimetals. In such phases, the material exhibits topological surface states and therefore can be a poor bulk metal but good surface conductor. The results may help to explain discrepant high-pressure experimental data reported for dense hydrogen as well as provide predictions for future measurements, including possible surface superconductivity in hydrogen. Related topological behavior may be expected in high-pressure phases formed in other elements including simple metals.
15 pages, 5 figures
References in corpus (8)
- Universal dynamical conductance in graphite
- Surface Impedance and Bulk Band Geometric Phases in One-Dimensional Systems
- Density functional theory study of phase IV of solid hydrogen
- Dissociation of high-pressure solid molecular hydrogen: Quantum Monte Carlo and anharmonic vibrational study
- Intrinsic conduction through topological surface states of insulating BiTe epitaxial thin films
- Room-Temperature Structures of Solid Hydrogen at High Pressures
- Quantum Monte Carlo Study of High Pressure Solid Molecular Hydrogen
- Fractionally Quantized Berry Phase, Adiabatic Continuation, and Edge States
Cited by in corpus (6)
- Emergence of topological electronic phases in elemental lithium under pressure
- Road to Room-Temperature Superconductivity: Tc above 260 K in Lanthanum Superhydride under Pressure
- Theoretical study of topological properties of ferromagnetic pyrite CoS
- High-pressure lithium as an elemental topological semimetal
- Topological Electride Phase of Sodium at High Pressures and Temperatures
- Topological electronic properties of silicon