Large thermopower in the antiferromagnetic semiconductor BaMn${}_2$Bi${}_2$

Abstract

We report electrical and thermal transport properties of Mn-based material BaMn${}_2$Bi${}_2$ with ThCr${}_2$Si${}_2$ structure. The resistivity of the antiferromagnetic BaMn${}_2$Bi${}_2$ shows a metal-semiconductor transition at $\sim 80$ K with decreasing temperature. Correspondingly, the thermopower $S$ shows a peak at the same temperature, approaching ~150 $\mu$V/K. With increasing temperature $S$ decreases to about 125 $\mu$V/K at the room temperature. The magnetic field enhances the peak value to 210 $\mu$V/K. The Hall resistivity reveals an abrupt change of the carrier density close to the metal-semiconductor transition temperature.

arXiv comment3 pages, 3 figures

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Cited by in corpus (1)

• Thermopower of the electron-doped manganese pnictide LaMnAsO