Large thermopower in the antiferromagnetic semiconductor BaMn$_2$Bi$_2$

Kefeng Wang; C. Petrovic

doi:10.1063/1.4828779

paper

Large thermopower in the antiferromagnetic semiconductor BaMn $_{2}$ Bi $_{2}$

arXiv:1604.05296 · doi:10.1063/1.4828779

Abstract

We report electrical and thermal transport properties of Mn-based material BaMn $_{2}$ Bi $_{2}$ with ThCr $_{2}$ Si $_{2}$ structure. The resistivity of the antiferromagnetic BaMn $_{2}$ Bi $_{2}$ shows a metal-semiconductor transition at $\sim 80$ K with decreasing temperature. Correspondingly, the thermopower $S$ shows a peak at the same temperature, approaching ~150 $μ$ V/K. With increasing temperature $S$ decreases to about 125 $μ$ V/K at the room temperature. The magnetic field enhances the peak value to 210 $μ$ V/K. The Hall resistivity reveals an abrupt change of the carrier density close to the metal-semiconductor transition temperature.

3 pages, 3 figures

Large thermopower in the antiferromagnetic semiconductor BaMn2​Bi2​

Abstract

Large thermopower in the antiferromagnetic semiconductor BaMn $_{2}$ Bi $_{2}$