Effect of periodic potential on exciton states in semiconductor carbon nanotubes
arXiv:1604.00079 · doi:10.1016/j.chemphys.2016.05.025
Abstract
We develop a theoretical background to treat exciton states of semiconductor single-walled carbon nanotubes (SWCNTs) in presence of a periodic potential induced by the surface acoustic wave (SAW) propagating along semiconducting SWCNT. The formalism naturally accounts for the electronic bands splitting into the Floquet sub-bands brought about by the Bragg scattering on the SAW potential. Optically induced transitions within the Floquet states and formation of correlated electron-hole pairs, i.e., exciton states, are examined numerically. We discuss dynamical formation of new van Hove singularities within electron-hole continuum and associated reduction of the exciton oscillator strengths and its effect on the photoluminescence quenching in presence of the SAW. We argue that SAW induced dynamical gaps in the single particle dispersion leads to redistribution of the oscillator strength from excitons to the Floquet edge states. The simulations also confirm exciton energy Stark red shift as well as reduction in the binding energy. Comparison of our results with previous theoretical and experimental studies is provided.
9 pages, 3 figures
References in corpus (8)
- The electronic properties of graphene
- Floquet chiral edge states in graphene
- Dynamic modulation of photonic crystal nanocavities using gigahertz acoustic phonons
- Charge pumping in carbon nanotube quantum dots
- Directional and dynamic modulation of the optical emission of an individual GaAs nanowire using surface acoustic waves
- Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves
- Electron properties of carbon nanotubes in a periodic potential
- Direct observation of dynamic surface acoustic wave controlled carrier injection into single quantum posts using phase-resolved optical spectroscopy