Large linear magnetoresistance in a new Dirac material BaMnBi2

Abstract

We report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. The Hall data reveals electron-type carriers and a mobility mu(5K) =1500cm2/Vs. The temperature dependence of magnetization displays behavior that is different from CaMnBi2 or SrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2. Angle-dependent magnetoresistance reveals the quasi-two-dimensional Fermi surface. A crossover from semiclassical MR-H2 dependence in low field to MR-H dependence in high field is observed in transverse magnetoresistance. Our results indicate the anisotropic Dirac fermion states in BaMnBi2.

4 pages, 3 figures

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• Equivalence of Effective Medium and Random Resistor Network models for disorder-induced unsaturating linear magnetoresistance
• Magnetic structure and excitations of the topological semimetal YbMnBi${}_2$
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• Non-trivial topology in a layered Dirac nodal-line semimetal candidate SrZnSb${}_2$ with distorted Sb square nets
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