Impact of ex-situ rapid thermal annealing on the magneto-optical properties and the oscillator strength of In(Ga)As quantum dots

Abstract

We discuss the influence of a rapid thermal annealing step on the magneto-optical emission properties of In(Ga)As/GaAs quantum dots. We map out a strong influence of the growth- and anneling parameters on the quantum excitons' effective Landé g-factors and in particular on their diamagnetic coefficients, which we directly correlate with the modification of the emitters shape and material composition. In addition, we study the excitons' spontaneous emission lifetime as a function of the annealing temperature and the dot height, and observe a strong increase of the emission rate with the quantum dot volume. The corresponding increase in oscillator strenth yields fully consistent results with the analysis of the diamagenic behavior. In particular, we demonstrate that a rapid thermal annealing step of 850${}^{\circ }$ C can be employed to increase the oscillator strength of as-grown InAs/GaAs QDs by more than a factor of $2$.

arXiv comment7 pages, 7 figures

References in corpus (7)

• Triggered single photons from a quantum dot
• Entangled Photon Pairs from Semiconductor Quantum Dots
• Exciton photon strong-coupling regime for a single quantum dot in a microcavity
• On-demand semiconductor single-photon source with near-unity indistinguishability
• Quantum dot-cavity strong-coupling regime measured through coherent reflection spectroscopy in a very high-Q micropillar
• Large quantum dots with small oscillator strength
• Non-linear exciton spin-splitting in single InAs/GaAs self-assembled quantum structures in ultrahigh magnetic fields

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• Acoustic Phonon Sideband Dynamics During Polaron Formation in a Single Quantum Dot
• Exploring coherence of individual excitons in InAs quantum dots embedded in natural photonic defects: influence of the excitation intensity
• Hyperfine-interaction limits polarization entanglement of photons from semiconductor quantum dots