On a drift-diffusion system for semiconductor devices
arXiv:1603.03839 · doi:10.1007/s00023-016-0493-6
Abstract
In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion as .
to appear in Annales Henri Poincaré
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