Pressure-resistant intermediate valence in Kondo insulator SmB6
arXiv:1603.02207 · doi:10.1103/PhysRevLett.116.156401
Abstract
Resonant x-ray emission spectroscopy (RXES) was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB6. Applied pressure reduces the f-occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. Over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.
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- 4 crystal field ground state of the strongly correlated topological insulator SmB
- Kondo insulator SmB6 under strain: surface dominated conduction near room temperature
- Bulk and surface electronic properties of SmB6: a hard x-ray photoelectron spectroscopy study
- Magnetic states in a three-dimensional topological Kondo insulator
- The anomalous antiferromagnetic topological phase in pressurized SmB6
- Novel Kondo-like behavior near magnetic instability in SmB : temperature and pressure dependences of Sm valence
- A RIXS investigation of the crystal-field splitting of Sm in SmB
- Pressure-Driven Valence Increase and Metallization in Kondo Insulator CeBiPt
- Irreversible proliferation of magnetic moments at cleaved surfaces of the topological Kondo insulator SmB6
- Many-body breakdown of indirect gap in topological Kondo insulators
- classification for a novel antiferromagnetic topological insulating phase in three-dimensional topological Kondo insulator
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