Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb${}_2$Te${}_3$/Bi${}_2$Te${}_3$ Heterojunctions

Abstract

Strain can induce a topological phase transition in bismuth dichalcogenides. We present the phase diagram for 3D topological insulators Bi${}_2$Te${}_3$, Sb${}_2$Te${}_3$, Bi${}_2$Se${}_3$ and Sb${}_2$Se${}_3$ with uniaxial and biaxal strain, which show metallic and insulating phases, both topologically trivial and non-trivial. In particular, uniaxial tension can drive Sb${}_2$Te${}_3$ into a topologically trivial insulating phase. Thus, we propose a Sb${}_2$Te${}_3$/Bi${}_2$Te${}_3$ heterojunction in which a topological interface state arises in the common gap of this topological insulator-normal insulator heterojunction that can be switched on or off by means of uniaxial strain. This interface state is confined in the Sb${}_2$Te${}_3$ subsystem and is physically protected from ambient impurities. Therefore, Sb${}_2$Te${}_3$/Bi${}_2$Te${}_3$ heterojunctions can host robust helical interface states with promising spintronic applications.

16 pages, 18 figures

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