Quantum critical transport at a continuous metal-insulator transition

Abstract

In contrast to the first-order correlation-driven Mott metal-insulator transition (MIT), contin- uous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball model, a representative of the latter class in the "strong disorder" category. Employing cluster-dynamical mean-field theory (CDMFT), we find clear and anomalous quantum critical scaling behavior manifesting as perfect mirror symmetry of scaling curves on both sides of the MIT. Surprisingly, we find that the beta-function, \b{eta}(g), scales like log(g) deep into the bad-metallic phase as well, providing sound unified basis for these findings. We argue that such "strong localization" quantum criticality may manifest in real three-dimensional systems where disorder effects are more important than electron-electron interactions.

7 pages, 9 figures

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Cited by in corpus (12)

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• Mott quantum criticality in the one-band Hubbard model: Dynamical mean-field theory, power-law spectra, and scaling
• Extended Falicov-Kimball model: Exact solution for finite temperatures
• Extended Falicov-Kimball model: exact solution for the ground state
• Nonequilibrium charge transport through Falicov-Kimball structures connected to metallic leads
• Gapless regime in the charge density wave phase of the finite dimensional Falicov-Kimball model
• Universal dielectric response across a continuous metal-insulator transition
• Quantum critical magneto-transport at a continuous metal-insulator transition
• Electronic transport through correlated electron systems with nonhomogeneous charge orderings
• Violation of Luttinger's theorem in the simplest doped Mott insulator: Falicov-Kimball model in strong correlation limit
• Thermal transport across a continuous metal-insulator transition
• Universal Mott quantum criticality in a modified periodic Anderson model