High-Pressure Synthesis and Superconductivity of Ag-doped Topological Crystalline Insulator SnTe (Sn1-xAgxTe with x = 0-0.5)
arXiv:1602.05319 · doi:10.7566/JPSJ.85.053702
Abstract
We have synthesized the single-phase polycrystalline samples of Sn1-xAgxTe, Ag-doped topological crystalline insulator SnTe, with a range of x = 0-0.5 using a high-pressure synthesis method. The crystal structure of Sn1-xAgxTe at room temperature is a cubic NaCl-type structure, which does not vary upon Ag substitution. Bulk superconductivity with a transition temperature of 2.4 K was observed for x = 0.15-0.25, and the optimal Ag content was x = 0.2. The Sn1-xAgxTe superconducting phase will be useful for understanding the superconductivity nature and mechanisms of the carrier-doped SnTe system.
14 pages, 7 figures, 1 table
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- Nodeless superconducting gap in the candidate topological superconductor SnInTe for x = 0.7
- Bi Substitution Effects on Superconductivity of Valence-Skip superconductor AgSnSe2
- Specific Heat and Electrical Transport Properties of Sn0.8Ag0.2Te Superconductor
- Full superconducting gap in the candidate topological superconductor InPbTe for x = 0.2
- Superconductivity in In-doped AgPbBiTe3 compounds synthesized by high-pressure synthesis