The weak side of strong topological insulators
arXiv:1602.03443 · doi:10.1103/PhysRevB.93.161105
Abstract
Strong topological insulators may have nonzero weak indices. The nonzero weak indices allow for the existence of topologically protected helical states along line defects of the lattice. If the lattice admits line defects that connect opposite surfaces of a slab of such a "weak-and-strong" topological insulator, these states effectively connect the surface states at opposite surfaces. Depending on the phases accumulated along the dislocation lines, this connection results in a suppression of in-plane transport and the opening of a spectral gap or in an enhanced density of states and an increased conductivity.
References in corpus (20)
- Quantum Spin Hall Effect in Graphene
- Topological Order and the Quantum Spin Hall Effect
- Topological Insulators in Three Dimensions
- Topological Insulators with Inversion Symmetry
- Topological invariants of time-reversal-invariant band structures
- Quantum Spin Hall Effect
- Topological Insulator Materials
- Three dimensional topological invariants for time reversal invariant Hamiltonians and the three dimensional quantum spin Hall effect
- Quantum-limited shot noise in graphene
- Topological Defects and Gapless Modes in Insulators and Superconductors
- Zitterbewegung, chirality, and minimal conductivity in graphene
- Helical Metal Inside a Topological Band Insulator
- Demonstration of one-parameter scaling at the Dirac point in graphene
- The strong side of weak topological insulators
- Quantum transport and two-parameter scaling at the surface of a weak topological insulator
- Interplay between electronic topology and crystal symmetry: Dislocation-line modes in topological band-insulators
- Statistical Topological Insulators
- Weak topological insulator with protected gapless helical states
- Interplay of Aharonov-Bohm and Berry phases in gate-defined graphene quantum dots
- Density of states as a probe of electrostatic confinement in graphene