Excitonic terahertz absorption in semiconductors with effective-mass anisotropies
arXiv:1602.02972 · doi:10.1364/JOSAB.33.000C30
Abstract
A microscopic approach is developed to compute the excitonic properties and the corresponding terahertz response for semiconductors characterized by anisotropic effective masses. The approach is illustrated for the example of germanium where it is shown that the anisotropic electron mass in the L-valley leads to two distinct terahertz absorption resonances separated by 0.8 meV.
10 pages, 7 figures