-cluster excited states in S
arXiv:1602.00241 · doi:10.1093/ptep/ptw016
Abstract
-cluster excited states in S are investigated with an extended Si+ cluster model, in which the Si core deformation and rotation, and the -cluster breaking are incorporated. In the GCM calculation with the extended Si+ cluster model, the -cluster excited states are obtained near the Si+ threshold energy. The Si core deformation and rotation effects, and also the -clusters breaking in the Si+ system are discussed. It is found that the rotation of the oblately deformed Si core gives a significant effect to the -cluster excited states whereas the -cluster breaking gives only a minor effect.
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