Exponential decay of a finite volume scheme to the thermal equilibrium for drift--diffusion systems

Abstract

In this paper, we study the large--time behavior of a numerical scheme discretizing drift-- diffusion systems for semiconductors. The numerical method is finite volume in space, implicit in time, and the numerical fluxes are a generalization of the classical Scharfetter-- Gummel scheme which allows to consider both linear or nonlinear pressure laws. We study the convergence of approximate solutions towards an approximation of the thermal equilibrium state as time tends to infinity, and obtain a decay rate by controlling the discrete relative entropy with the entropy production. This result is proved under assumptions of existence and uniform-in-time $L$\infty$$ estimates for numerical solutions, which are then discussed. We conclude by presenting some numerical illustrations of the stated results.

References in corpus (2)

• Study of a fully implicit scheme for the drift-diffusion system. Asymptotic behavior in the quasi-neutral limit
• Numerical simulation of organic semiconductor devices with high carrier densities

Cited by in corpus (6)

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• Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
• The Scharfetter--Gummel scheme for aggregation-diffusion equations
• A structure preserving hybrid finite volume scheme for semi-conductor models with magnetic field on general meshes
• Combining the hybrid mimetic mixed method with the Scharfetter-Gummel scheme for magnetised transport in plasmas
• Structure-preserving schemes for drift-diffusion systems on general meshes: DDFV vs HFV