Structure stability and magnetism in graphene impurity complexes with embedded V and Nb atoms
arXiv:1511.04313 · doi:10.1016/j.jmmm.2017.03.005
Abstract
First-principles density functional theory (DFT) study of embedding V and Nb atom in monovacant and divacant graphene is reported. Complete/almost complete spin polarization is verified for V/Nb embedding in MV/DV graphene. The origin of magnetism has been identified via interaction of 3d-states of embedded trnasition metal atom with p-states of inequivalent C atoms present in the vicinity of embedding site. Band structure analysis has been performed to address the semiconducting behavior of graphene in minority spin channel on embedding V/Nb atom. The isosurface plots also confirm the magnetic nature of present nanosystems. Our results reveal that these nanosystems have potential for futuristic applications such as spintronics, energy resources and high frequency transistors.
5 figures, 2 Tables
References in corpus (11)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Ultrahigh electron mobility in suspended graphene
- Room-Temperature Quantum Hall Effect in Graphene
- Induced Magnetic Ordering by Proton Irradiation in Graphite
- Tuning the Structural, Electronic, and Magnetic Properties of Germanene by the Adsorption of 3 Transition Metal Atoms
- Electronic and magnetic properties of the graphene-ferromagnet interface
- Prediction of a quantum anomalous Hall state in Co decorated silicene
- Electronic Properties of Boron and Nitrogen doped graphene: A first principles study
- Electronic properties of Mn decorated silicene on hexagonal boron nitride
- Modelling magnetism of C at O and B monovacancies in graphene