Explaining the x-ray nonlinear susceptibility of diamond and silicon near absorption edges
arXiv:1510.04302 · doi:10.1103/PhysRevB.92.155119
Abstract
We report the observation and the theoretical explanation of the parametric down-conversion nonlinear susceptibility at the -absorption edge of diamond and at the -absorption edge of a silicon crystal. Using arguments similar to those invoked to successfully predict resonant inelastic x-ray spectra, we derive an expression for the renormalization term of the non-linear susceptibility at the x-ray edges, which can be evaluated by using first-principles calculations of the atomic scattering factor . Our model is shown to reproduce the observed enhancement of the parametric down-conversion at the diamond and the Si edges rather than the suppression previously claimed.
5 pages, 4 figures
References in corpus (3)
Cited by in corpus (5)
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