Determination of Gap Solution and Critical Temperature in Doped Graphene Superconductivity
arXiv:1509.08045 · doi:10.1007/s00033-017-0779-7
Abstract
It is shown that the gap solution and critical transition temperature are significantly enhanced by doping in a recently developed BCS formalism for graphene superconductivity in such a way that positive gap and transition temperature both occur in arbitrary pairing coupling as far as doping is present. The analytic construction of the BCS gap and transition temperature offers highly effective globally convergent iterative methods for the computation of these quantities. A series of numerical examples are presented as illustrations consolidating the analytic understanding achieved.
21 pages, 8 figures
References in corpus (9)
- Evidence for superconductivity in Li-decorated monolayer graphene
- Kohn-Luttinger superconductivity in graphene
- Excitation gap of a graphene channel with superconducting boundaries
- Electronic structure of superconducting KC and non-superconducting LiC graphite intercalation compounds: Evidence for a graphene-sheet-driven superconducting state
- Local impurity effects in superconducting graphene
- Magnetic Field Effects on the Superconducting and Quantum Critical Properties of Layered Systems with Dirac Electrons
- Comment on "BCS superconductivity of Dirac fermions in graphene layers"
- Pairing gaps near ferromagnetic quantum critical points
- Andreev reflection in edge states of time reversal invariant Landau levels