High frequency electro-optic measurement of strained silicon racetrack resonators

Abstract

The observation of the electro-optic effect in strained silicon waveguides has been considered as a direct manifestation of an induced ${\chi }^{(2)}$ non-linearity in the material. In this work, we perform high frequency measurements on strained silicon racetrack resonators. Strain is controlled by a mechanical deformation of the waveguide. It is shown that any optical modulation vanishes independently of the applied strain when the applied voltage varies much faster than the carrier effective lifetime, and that the DC modulation is also largely independent of the applied strain. This demonstrates that plasma carrier dispersion is responsible for the observed electro-optic effect. After normalizing out free carrier effects, our results set an upper limit of $8pm/V$ to the induced high-speed ${\chi }_{eff,zzz}^{(2)}$ tensor element at an applied stress of $-0.5GPa$. This upper limit is about one order of magnitude lower than the previously reported values for static electro-optic measurements.

References in corpus (2)

• Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides
• Optical loss by surface transfer doping in silicon waveguides

Cited by in corpus (4)

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• Pump-and-probe optical transmission phase shift as a quantitative probe of the Bogoliubov dispersion relation in a nonlinear channel waveguide
• Bypassing the filtering challenges in microwave-optical quantum transduction through optomechanical four-wave mixing