Non-Markovian Effects in the Spin Transfer Dynamics in Diluted Magnetic Semiconductors due to Excitation in Proximity to the Band Edge

Abstract

The non-Markovian effects in the spin dynamics in diluted magnetic semiconductors found in quantum kinetic calculations can be reproduced very well by a much simpler effective single electron theory, if a finite memory is accounted for. The resulting integro-differential equation can be solved by a differential transform method, yielding the Taylor series of the solution. From the comparison of both theories it can be concluded that the non-Markovian effects are due to the spectral proximity of the excited electrons to the band edge.

References in corpus (2)

• Non-Markovian hole spin kinetics in $p$-type GaAs quantum wells
• Effective Equations for the Precession Dynamics of Electron Spins and Electron-Impurity Correlations in Diluted Magnetic Semiconductors

Cited by in corpus (9)

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• Quantum kinetic equations for the ultrafast spin dynamics of excitons in diluted magnetic semiconductor quantum wells after optical excitation
• Trend reversal in the magnetic-field dependence of exciton spin-transfer rates in diluted magnetic semiconductors due to non-Markovian dynamics
• Carrier-impurity spin transfer dynamics in paramagnetic II-VI diluted magnetic semiconductors in the presence of a wave-vector-dependent magnetic field
• Non-perturbative Correlation Effects in Diluted Magnetic Semiconductors
• Phonon impact on the dynamics of resonantly excited and hot excitons in diluted magnetic semiconductors
• Spin dynamics of hot excitons in diluted magnetic semiconductors with spin-orbit interaction
• Role of excited states in the dynamics of excitons and their spins in diluted magnetic semiconductors
• Origins of overshoots in the exciton spin dynamics in semiconductors