Pinning-induced pn junction formation in low-bandgap two-dimensional semiconducting systems
arXiv:1509.00250
Abstract
A model is presented for junction formation near metal-semiconductor contacts in two-dimensional semiconducting systems such as graphene. Carrier type switching occurs in a region near the metal-semiconductor junction when energy band bending leads to a crossing between the junction Fermi level and the Dirac energy. A bias-dependent depletion region occurs due to the minimization of carrier density, which is shown to act as an additional parasitic resistance in devices. The junction resistance is demonstrated by its implementation in a transfer length structure.
9 pages, 3 figures