Electronic structure of YbB: Is it a Topological Insulator or not?
arXiv:1508.07212 · doi:10.1103/PhysRevLett.116.116401
Abstract
To resolve the controversial issue of the topological nature of the electronic structure of YbB, we have made a combined study using density functional theory (DFT) and angle resolved photoemission spectroscopy (ARPES). Accurate determination of the low energy band topology in DFT requires the use of modified Becke-Johnson exchange potential incorporating the spin-orbit coupling and the on-site Coulomb interaction of Yb electrons as large as 7 eV. We have double-checked the DFT result with the more precise GW band calculation. ARPES is done with the non-polar (110) surface termination to avoid band bending and quantum well confinement that have confused ARPES spectra taken on the polar (001) surface termination. Thereby we show definitively that YbB has a topologically trivial B 2-Yb 5 semiconductor band gap, and hence is a non-Kondo non-topological insulator (TI). In agreement with theory, ARPES shows pure divalency for Yb and a - band gap of 0.3 eV, which clearly rules out both of the previous scenarios of - band inversion Kondo TI and - band inversion non-Kondo TI. We have also examined the pressure-dependent electronic structure of YbB, and found that the high pressure phase is not a Kondo TI but a \emph{p}-\emph{d} overlap semimetal.
The main text is 6 pages with 4 figures, and the supplementary information contains 6 figures. 11 pages, 10 figures in total To be appeared in Phys. Rev. Lett. (Online publication is around March 16 if no delays.)
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- Quantum chemical insights into hexaboride electronic structures: correlations within the boron -orbital subsystem
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- Nanoscale Conducting and Insulating Domains on YbB
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