Effective doublon and hole temperatures in the photo-doped dynamic Hubbard model
arXiv:1508.07117 · doi:10.1063/1.4935245
Abstract
Hirsch's dynamic Hubbard model describes the effect of orbital expansion with occupancy by coupling the doublon operator to an auxiliary boson. We use the nonequilibrium dynamical mean field method to study the properties of doublon and hole carriers in this model in the strongly correlated regime. In particular, we discuss how photodoping leads to doublon and hole populations with different effective temperatures, and we analyze the relaxation behavior as a function of the boson coupling and boson energy. In the polaronic regime, the nontrivial energy exchange between doublons, holes and bosons can result in a negative temperature distribution for the holes.
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- Thermalization after photoexcitation from the perspective of optical spectroscopy
- Electron-light interaction in nonequilibrium -- exact diagonalization for time dependent Hubbard Hamiltonians
- Enhancement of impact ionization in Hubbard clusters by disorder and next-nearest-neighbor hopping
- Effects of frustration on the nonequilibrium dynamics of photo-excited lattice systems
- Relaxation of photoexcitations in polaron-induced magnetic microstructures
- Pump-probe Auger-electron spectroscopy of Mott insulators
- A new pathway to impact ionization in a photo-excited one-dimensional ionic Hubbard model