Evidence for resonant scattering of electrons by spin fluctuations in $LaNi{O}_3/LaAl{O}_3$ heterostructures grown by pulsed laser deposition

Abstract

We present measurements of resistivity $\rho$ in highly oriented $LaNi{O}_3$ films grown on $LaAl{O}_3$ substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal $\rho (T)\propto T^{3/2}$ dependence for the entire temperature interval ($20K<T<300K$). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy $\hslash {\omega }_{sf}\simeq 2.1meV$) triggered by spin-density wave propagating through the interface boundary of $LaNi{O}_3/LaAl{O}_3$ sandwich.

Accepted for publication in JETP Letters

References in corpus (2)

• Possible manifestation of spin fluctuations in the temperature behavior of resistivity in Sm_{1.85}Ce_{0.15}CuO_4 thin films
• Small-angle interband scattering as the origin of the $T^{3/2}$ resistivity in MnSi

Cited by in corpus (3)

• Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4
• Influence of substrate on structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition
• Scaling like behaviour of resistivity observed in LaNiO_3 thin films grown on SrTiO_3 substrate by pulsed laser deposition