Analysis of radiation effect on the threshold voltage of flash memory device
arXiv:1508.02583 · doi:10.1109/ISCAS.2015.7169292
Abstract
Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this letter, the threshold voltage shift of the floating gate transistor (FGT) is analyzed by a mathematical model.