Control of Valley Degeneracy in MoS2 by Layer Thickness and Electric Field and Its Effect on Thermoelectric Properties

Abstract

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at Γ and K points in the highest energy valence band and the electron valleys at K and Σmin points in the lowest energy conduction band are shifted differently. The hole valley degeneracy is observed in MoS2 monolayer, while that of electron valley is in MoS2 bilayer and monolayer under the external electric field. By tuning the valley degeneracy, the Seebeck coefficient and electrical conductivity can be separately controlled, and the maximum power factor can be obtained in n-type (p-type) MoS2 monolayer with (without) the external electric field. We suggest that the transition metal dichalcogenides are good example to investigate the role of valley degeneracy in the thermoelectric and optical properties with the control of interlayer interaction and external electric field strength.

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Cited by in corpus (2)

• Quantum critical scaling for finite temperature Mott-like metal-insulator crossover in a few layered-MoS${}_2$
• Thermal transport and thermoelectric properties of transition metal dichalcogenides Mo$X_2$ from first-principles calculation