Ultrasonic attenuation via energy diffusion channel in disordered conductors

Abstract

We predict an existence of an new dissipation channel leading to attenuation of ultrasound in disordered conductors and superconductors with perfect electroneutrality. It is due to slow diffusion of thermal energy. We show that in doped silicon ultrasound attenuation may be enhanced by a factor about 100. Similar effect is also studied for s-wave and d-wave superconductors. The latter case is applied to BSCCO family where strong enhancement of ultrasound attenuation is predicted. For usual s-wave superconductors new dissipation channel might be important for very low-electron-density materials near the BCS-BEC crossover.

9+iδ pages, 5 figures

References in corpus (5)

• Electron transport in disordered graphene
• Jumps in current-voltage characteristics in disordered films
• Quantum criticality of d-wave quasiparticles and superconducting phase fluctuations
• Electron-Acoustic Phonon Energy Loss Rate in Multi-Component Electron Systems with Symmetric and Asymmetric Coupling Constants
• Mesoscopic variations of local density of states in disordered superconductors

Cited by in corpus (5)

• Bosonic symmetry protected topological phases with reflection symmetry
• Quasiparticle relaxation in superconducting nanostructures
• Evidence of the disorder-independent electron-phonon scattering time in thin NbN films
• Electron cooling by phonons in superconducting proximity structures
• Ultrasonic attenuation in a pseudogapped superconductor