Magnetoresistance of doped silicon

Abstract

We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-non-metal transition. The results are compared to those from a many-body theory where the donor-electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.

7 pages, 8 figures

References in corpus (2)

• Titanic Magnetoresistance in WTe2
• Non-saturating magnetoresistance of inhomogeneous conductors: comparison of experiment and simulation

Cited by in corpus (1)

• Heavily $n$-doped Ge: low-temperature magnetoresistance properties