Magnetoresistance of doped silicon
arXiv:1506.01542 · doi:10.1103/PhysRevB.91.214414
Abstract
We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-non-metal transition. The results are compared to those from a many-body theory where the donor-electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.
arXiv comment7 pages, 8 figures
References in corpus (8)
- Titanic Magnetoresistance in WTe2
- Non-saturating magnetoresistance in heavily disordered semiconductors
- Classical magnetotransport of inhomogeneous conductors
- Insulator-to-metal transition in sulfur-doped silicon
- Non-saturating magnetoresistance of inhomogeneous conductors: comparison of experiment and simulation
- Universal Properties of Linear Magnetoresistance in Strongly Disordered Semiconductors
- Model for a Macroscopically Disordered Conductor with an Exactly Linear High-Field Magnetoresistance
- Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping