Metallic State of Low Mobility Silicon at High Carrier density induced by an Ionic Liquid

Abstract

High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low mobility samples at much higher areal carrier densities than found for samples of high mobility. We have also observed a mobility peak in metallic samples as the carrier density was increased beyond $10^{13}{\text{cm}}^{-2}$.

References in corpus (1)

• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs