A Germanium-Vacancy Single Photon Source in Diamond
arXiv:1503.04938
Abstract
Color centers in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. Here, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.
Main text: 16 pages, 5 figure and Supplementary information: 5 pages, 4 figures
References in corpus (9)
- Quantum Cryptography
- Experimental quantum teleportation
- A Diamond Nanowire Single Photon Antenna
- Photon antibunching in the fluorescence of individual color centers in diamond
- The electronic structure of the silicon vacancy color center in diamond
- Multiple intrinsically identical single photon emitters in the solid-state
- Stable single photon source in near infrared
- Electronic structure of the negatively-charged silicon-vacancy center in diamond
- An \emph{ab initio} study on split silicon-vacancy defect in diamond: electronic structure and related properties