Reply to "Comment on `Floquet Fractional Chern Insulators'"
arXiv:1503.02580
Abstract
We respond to the comments expressed by L. D'Alessio in arXiv:1412.3481 on our work "Floquet Fractional Chern Insulators" [Phys. Rev. Lett. 112, 156801 (2014)]. We confirm the central result that the ground state of the effective Hamiltonian is an interacting fractional Chern insulator.
2 Pages, 2 figures. Reply to comment arXiv:1412.3481