Phonon study of rhombohedral BS under high pressure

Abstract

Raman spectra of rhombohedral boron monosulfide (r-BS) were measured under pressures up to 34 GPa at room temperature. No pressure-induced structural phase transition was observed, while strong pressure shift of Raman bands towards higher wavenumbers has been revealed. IR spectroscopy as a complementary technique has been used in order to completely describe the phonon modes of r-BS. All experimentally observed bands have been compared with theoretically calculated ones and modes assignment has been performed. r-BS enriched by 10B isotope was synthesized, and the effect of boron isotopic substitution on Raman spectra was observed and analyzed.

References in corpus (2)

• On melting of B4C boron carbide under pressure
• Boron phosphide under pressure: in situ study by Raman scattering and X-ray diffraction

Cited by in corpus (3)

• Origin of high hardness and optoelectronic and thermo-physical properties of boron-rich compounds B6X (X = S, Se): a comprehensive study via DFT approach
• Orthorhombic boron oxide under pressure: in situ study by X-ray diffraction and Raman scattering
• High-pressure synthesis of boron-rich chalcogenides B12S and B12Se