Temperature and field dependence of the intrinsic tunnelling structure in overdoped BiSrCaCuO
arXiv:1503.00335 · doi:10.1103/PhysRevB.98.014507
Abstract
We report intrinsic tunnelling data for mesa structures fabricated on three over- and optimally-doped crystals with transition temperatures of 86-78~K and 0.16-0.19~holes per CuO unit, for a wide range of temperature () and applied magnetic field (), primarily focusing on one over-doped crystal(OD80). The differential conductance above the gap edge shows clear dip structure which is highly suggestive of strong coupling to a narrow boson mode. Data below the gap edge suggest that tunnelling is weaker near the nodes of the d-wave gap and give clear evidence for strong -dependent pair breaking. These findings could help theorists make a detailed Eliashberg analysis and thereby contribute towards understanding the pairing mechanism. We show that for our OD80 crystal the gap above although large, is reasonably consistent with the theory of superconducting fluctuations.
15 pages, 15 figures plus supplemental material, 1 table and 47 ASCII files with raw data. Corrected files for Fig. 12a
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