An atomic resolution, single-spin magnetic resonance detection concept based on tunneling force microscopy

Abstract

A comprehensive study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single-electron tunneling between two electrically isolated paramagnetic states. Single spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured AFM system noise. The results show that the approach could provide single spin measurement of electrically isolated qubit states with atomic spatial resolution at room temperature.

26 pages, 8 figures

References in corpus (6)

• Single-shot read-out of an individual electron spin in a quantum dot
• Single-shot readout of an electron spin in silicon
• Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
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Cited by in corpus (2)

• Nanoladder cantilevers made from diamond and silicon
• Synthesis of thin silicon dioxide layers with high E' center densities and investigation of the E' center spin relaxation dynamics for single spin readout applications