Enhanced single photon emission from positioned InP/GaInP quantum dots coupled to a confined Tamm-plasmon mode

Abstract

We report on the enhancement of the spontaneous emission in the visible red spectral range from site-controlled InP/GaInP quantum dots by resonant coupling to Tammplasmon modes confined beneath gold disks in a hybrid metal/semiconductor structure. The enhancement of the emission intensity is confirmed by spatially resolved microphotoluminescence area scans and temperature dependent measurements. Single photon emission from our coupled system is verified via second order autocorrelation measurements. We observe bright single quantum dot emission of up to ~173000 detected photons per second at a repetition rate of the excitation source of 82 MHz, and calculate an extraction efficiency of our device as high as 7%.

References in corpus (2)

• Triggered single photons from a quantum dot
• Entangled Photon Pairs from Semiconductor Quantum Dots

Cited by in corpus (6)

• Tamm plasmon Photonic Crystals : from Bandgap Engineering to Defect Cavity
• Photon echoes from (In,Ga)As quantum dots embedded in a Tamm-plasmon microcavity
• A model for confined Tamm plasmon devices
• Telecommunication wavelength confined Tamm plasmon structures containing InAs/GaAs quantum dot emitters at room temperature
• Design of a hybrid Mie-Tamm photonic structure as a highly directional GHz single-photon source
• Tamm Plasmon in a Structure with the Nanocomposite Containing Spheroidal Core-Shell Particles