Single crystal study of layered URhIn materials: case of the novel URhIn compound
arXiv:1501.02154 · doi:10.1016/j.jmmm.2015.01.015
Abstract
We report on the single crystal properties of the novel URhIn compound studied in the context of parent URhIn and UIn systems. The compounds were prepared by In self-flux method. URhIn adopts the HoCoGa-type structure with lattice parameters a Å and c Å. The behavior of URhIn strongly resembles that of the related URhIn and UIn with respect to magnetization, specific heat and resistivity except for magnetocrystalline anisotropy developing with lowering dimensionality in the series UIn vs. URhIn and URhIn. URhIn orders antiferromagnetically below T K and exhibits a slightly enhanced Sommerfeld coefficient mJmolK. Magnetic field leaves the value of Néel temperature for both URhIn and URhIn unaffected up to 9 T. On the other hand, T is increasing with applying hydrostatic pressure up to 3.2 GPa. The weak temperature dependence of in all studied compounds might be attributed to the mainly itinerant nature of 5f electrons. The character of uranium 5f electron states of URhIn was studied by first principles calculations based on the density functional theory. The overall phase diagram of URhIn is discussed in the context of magnetism in the related URhX and UX (X = In, Ga) compounds.