Tripling the critical temperature of KFeAs by carrier switch
arXiv:1501.00330
Abstract
Superconductivity of high critical temperature () superconductors is usually realized through chemical dopant or application of pressure in a similar way to induce charge carriers of either electrons or holes into their parent compounds. For chemical doping, superconductivity behaves asymmetrically with the maximum often higher for optimal hole-doping than that of optimal electron-doping on the same parent compound. However, whether electron carriers could be in favour of higher than holes in such high- superconductors is unknown but attractive. Here we show that the application of pressure can drive KFeAs from hole- to electron-superconductivity after passing the previously reported -shape or oscillation regime. The maximum in the electron-dominated region is tripled to the initial value of 3.5 K or the average in the low-pressure hole-dominated region. The structural transition takes place from the tetragonal to collapsed tetragonal phase when the carrier characteristic is changed upon compression. Our results unambiguously offer a new route to further improve superconductivity with huge enhancement for a compound through carrier switch. The strong electronic correlations in KFeAs are suggested to account for the unexpected enhancement of superconductivity in the collapsed tetragonal phase.
20 pages, 6 figures
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